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SI13U
特點
Tg≥230℃ (DMA)，Td>400℃ (5% loss, TGA)High Flexural Modulus/Low X, Y / Z-axis CTE
Good punching & Drilling ability
Halogen-free compatible with lead-free processing. RoHS/WEEE compliant.
應用領域
Memory Card, SSD,DRAM
Fingerprint, RFModule, AP
BOC, COB, WBBGA
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| Items | Condition | Unit | SI13U |
|---|---|---|---|
| Tg | DMA | ℃ | 245 |
| Td | 5% wt. loss |
℃ |
＞400 |
| CTE (X/Y-axis) | Before Tg |
ppm/℃ |
13 |
|
CTE (Z-axis) |
α1/α2 |
ppm/℃ |
30/140 |
| Dielectric Constant * (1GHz) | @1GHz | - | 4.8 |
|
Dissipation Factor * (1GHz) |
@1GHz | - | 0.013 |
| Peel Strength * | 1/3 OZ, LP Cu |
N/mm |
0.90 |
| Solder Dipping | @288℃ | min | >30 |
| Young's modulus | 50℃ | GPa | 22 |
|
Young's modulus |
200℃ |
GPa |
13 |
| Flexural Modulus* |
50℃ |
GPa |
28 |
|
Flexural Modulus* |
200℃ |
GPa |
15 |
|
Water Absorption* |
A | % | 0.14 |
| Water Absorption* | 85℃/85%RH, 168Hr |
% |
0.35 |
|
Flammability |
UL-94 |
Rating |
V-0 |
| Thermal Conductivity | - | W/(m.K) | 0.58 |
| Color | - | - | Black |
Remarks:
Specimen thickness: 0.10mm, besides the items with * is for 0.8mm specimen thickness. Test method is according to IPC-TM-650.
All the typical value listed above is foryour reference only, please turn to Shengyi Technology Co., Ltd. for detailed information, and all rights from this data sheet are reserved by Shengyi Technology Co., Ltd.