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EN/CN

Product

SI13U

Characteristic

Tg≥230℃ (DMA),Td>400℃ (5% loss, TGA)

High Flexural Modulus/Low X, Y / Z-axis CTE

Good punching & Drilling ability

Halogen-free compatible with lead-free processing. RoHS/WEEE compliant.

Application Area

Memory Card, SSD,DRAM

Fingerprint, RFModule, AP

BOC, COB, WBBGA

  • Product Performance
  • Product Certificate
  • Data Download
Items Condition Unit SI13U
Tg DMA 245
Td 5% wt. loss
>400
CTE (X/Y-axis) Before Tg ppm/℃
13
CTE (Z-axis)
α1/α2 ppm/℃
30/140
Dielectric Constant * (1GHz) @1GHz - 4.8
Dissipation Factor * (1GHz)
@1GHz - 0.013
Peel Strength * 1/3 OZ, LP Cu N/mm
0.90
Solder Dipping @288℃ min >30
Young's modulus 50℃ GPa 22
Young's modulus
200℃ GPa
13
Flexural Modulus* 50℃
GPa
28
Flexural Modulus*
200℃
GPa
15
Water Absorption*
A % 0.14
Water Absorption* 85℃/85%RH, 168Hr %
0.35
Flammability
UL-94 Rating
V-0
Thermal Conductivity - W/(m.K) 0.58
Color - - Black

Remarks:

Specimen thickness: 0.10mm, besides the items with * is for0.8mm specimen thickness. Test method is according to IPC-TM-650.

All the typical value listed above is foryour reference only, please turn to Shengyi Technology Co., Ltd. for detailedinformation, and all rights from this data sheet are reserved by ShengyiTechnology Co., Ltd.

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